Highly Compensated GaAs Crystal Obtained by Molecular CO Doping

Effects of D-Doping on Characteristics of AlAs/GaAs Barriers Grown by Mba at 400 ??C

Effects of d-doping on barriers effective heights and series resistance of highly doped n-type GaAs/AIAs/GaAs/AlAs/GaAs heterostructures, grown by molecular beam epitaxy (MBE) at 400?°C, have been studied. As it was expected, inclusion of an n+ d-doped layer at each hetero-interface has reduced the barriers heights and series resistance of the structure significantly, while p+ d-doped layers ha...

Photocatalytic hydrogen generation enhanced by band gap narrowing and improved charge carrier mobility in AgTaO3 by compensated co-doping.

The correlation of the electronic band structure with the photocatalytic activity of AgTaO3 has been studied by simulation and experiments. Doping wide band gap oxide semiconductors usually introduces discrete mid-gap states, which extends the light absorption but has limited benefit for photocatalytic activity. Density functional theory (DFT) calculations show that compensated co-doping in AgT...

Technology and properties of GaAs doping superlattices

Heterojunction and doping superlattices are widely used in many advanced semiconductor devices such as resonant tunnelling diodes, optical modulators, cascade lasers, tunable light emitting diodes and photodetectors. These structures exhibit nonlinear electrooptical properties. Nonlinear processes are governed by the Franz–Keldysh effect and the band-filling effect in the n-i-p-i superlattices ...

WEAK LOCALIZATION EFFECTS IN GaAs DOPING SUPERLATTICES

Te-doping of self-catalyzed GaAs nanowires